Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Schottky diodeDescription: IXYS SEMICONDUCTOR DSA80C100PB Small signal Schottky diode, dual common cathode, 100 V, 40 A, 730 mV, 400 A, 175 ° C92825+$12.963650+$12.4096200+$12.0994500+$12.02181000+$11.94422500+$11.85565000+$11.80027500+$11.7448 -
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Category: MOSpipeDescription: Mosfet n-Ch 300V 60A Plus22026261+$50.159110+$47.2811100+$45.1432250+$44.8143500+$44.48531000+$44.11532500+$43.78645000+$43.5808 -
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Category: Classification of electronic componentsDescription: IGBT43195+$24.248350+$23.2120200+$22.6317500+$22.48661000+$22.34162500+$22.17585000+$22.07217500+$21.9685 -
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Category: MOSpipeDescription: TO-220 N-CH 55V 90A444410+$9.9672100+$9.4688500+$9.13661000+$9.12002000+$9.05355000+$8.97057500+$8.904010000+$8.8708 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB86265+$3.248125+$3.007550+$2.8391100+$2.7669500+$2.71882500+$2.65865000+$2.634610000+$2.5985 -
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Category: MOSpipeDescription: MOSFET Transistors, a series of advanced discrete power MOSFET devices from IXYS27015+$15.545850+$14.8814200+$14.5094500+$14.41641000+$14.32342500+$14.21715000+$14.15077500+$14.0842 -
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Category: Classification of electronic componentsDescription: Mosfet n-Channel 700V 4A To220-3458110+$8.8296100+$8.3881500+$8.09381000+$8.07912000+$8.02025000+$7.94667500+$7.887810000+$7.8583 -
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Category: MOSpipeDescription: ISOPLUS N-CH 75V 160A27325+$27.703350+$26.5194200+$25.8564500+$25.69061000+$25.52492500+$25.33555000+$25.21717500+$25.0987 -
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Category: MOSpipeDescription: PLUS N-CH 85V 230A10471+$39.323010+$37.0668100+$35.3907250+$35.1329500+$34.87501000+$34.58492500+$34.32715000+$34.1659 -
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Category: IGBTtransistorDescription: IGBT Discrete components, IXYS XPT series XPT of IXYS ™ The series of discrete IGBT components adopts ultra light through-hole thin chip technology, which can reduce thermal resistance and energy loss. These devices provide fast switching time, low tail line current, and offer various industry standards and proprietary packaging. High power density and low VCE (sat) square reverse bias safe working area (RBSOA) up to rated breakdown voltage short-circuit capacity, ensuring a forward on voltage temperature coefficient of 10usec optional Co Pack Sonic FRD ™ Or HiPerFRED ™ International standards for diodes and proprietary high-voltage packaging # # IGBT discrete components and modules, IXYS insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.65581+$49.145310+$46.3255100+$44.2307250+$43.9085500+$43.58621000+$43.22372500+$42.90145000+$42.7000 -
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Category: IGBTtransistorDescription: Igbt 650V 130A 600W To22092541+$38.566610+$36.3538100+$34.7100250+$34.4571500+$34.20421000+$33.91972500+$33.66685000+$33.5087 -
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Category: IGBTtransistorDescription: Igbt 650V 30A 160W To-22055375+$23.352050+$22.3541200+$21.7952500+$21.65551000+$21.51582500+$21.35615000+$21.25637500+$21.1565 -
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Category: MOSpipeDescription: PLUS N-CH 75V 175A39551+$96.021610+$91.8467100+$91.0952250+$90.5107500+$89.59231000+$89.17482500+$88.59035000+$88.0893 -
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Category: MOSpipeDescription: TO-220 Isolation label81975+$34.751350+$33.2662200+$32.4346500+$32.22671000+$32.01882500+$31.78115000+$31.63267500+$31.4841 -
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Category: MOSpipeDescription: TO-220 N-CH 800V 1A25705+$18.309350+$17.5269200+$17.0887500+$16.97921000+$16.86962500+$16.74445000+$16.66627500+$16.5879 -
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Category: MOSpipeDescription: IXYS SEMICONDUCTOR IXTP42N25P Transistor, MOSFET, Polarity FET, N-channel, 42 A, 250 V, 84 Mohm, 10 V, 5.5 V531110+$6.8436100+$6.5014500+$6.27331000+$6.26192000+$6.21635000+$6.15927500+$6.113610000+$6.0908 -
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Category: MOSpipeDescription: TO-220 N-CH 75V 90A723210+$10.0368100+$9.5350500+$9.20041000+$9.18372000+$9.11685000+$9.03317500+$8.966210000+$8.9328 -
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Category: MOSpipeDescription: N Compared with the early series of power MOSFETs, the IXYS X2 series of channel power MOSFETs can significantly reduce resistance and gate charge, thereby reducing losses and improving operational efficiency. These sturdy devices include intrinsic diodes, suitable for hard switching and resonant mode applications. X2 class power MOSFETs offer various industrial standard packages, including isolation types, with ratings up to 120A (at 650V). Typical applications include: DC-DC converters, AC and DC motor drivers, switch mode and resonant mode power supplies, DC chopper, solar inverters, temperature and lighting control. Extremely low RDS (turn-on) and QG (gate charge) intrinsic rectifier diode low intrinsic gate resistance low packaged inductance industrial standard package # # MOSFET transistor, a series of advanced discrete power MOSFET devices from IXYS54415+$14.307950+$13.6965200+$13.3541500+$13.26851000+$13.18292500+$13.08505000+$13.02397500+$12.9627 -
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Category: MOSpipeDescription: N Channel power MOSFET, IXYS HiperFET ™ Polar ™ Series IXYS N-channel power MOSFET with fast intrinsic diode (HiPerFET) ™) ### MOSFET transistors, a series of advanced discrete power MOSFET devices from IXYS70525+$28.565650+$27.3448200+$26.6612500+$26.49031000+$26.31942500+$26.12415000+$26.00207500+$25.8799 -
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Category: MOSpipeDescription: IXYS SEMICONDUCTOR IXTP75N10P Transistor, MOSFET, Polarity FET, N-channel, 75 A, 100 V, 25 Mohm, 10 V, 5.5 V70635+$30.374450+$29.0763200+$28.3494500+$28.16771000+$27.98602500+$27.77835000+$27.64857500+$27.5187 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 500V 6A 3Pin(3+Tab) TO-22027985+$5.306925+$4.913850+$4.6386100+$4.5207500+$4.44202500+$4.34385000+$4.304410000+$4.2455 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 500V 5A 3Pin(3+Tab) TO-220674710+$9.1356100+$8.6788500+$8.37431000+$8.35912000+$8.29825000+$8.22207500+$8.161110000+$8.1307 -
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Category: MOSpipeDescription: Through hole N channel 200V 60A (Tc) 500W (Tc) TO-220AB62425+$27.140550+$25.9806200+$25.3311500+$25.16871000+$25.00642500+$24.82085000+$24.70487500+$24.5888 -
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Category: MOSpipeDescription: TO-220 N-CH 600V 4A60325+$12.568150+$12.0310200+$11.7303500+$11.65511000+$11.57992500+$11.49395000+$11.44027500+$11.3865 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 600V 5A 3Pin(3+Tab) TO-220445610+$11.9628100+$11.3647500+$10.96591000+$10.94602000+$10.86625000+$10.76657500+$10.686810000+$10.6469 -
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Category: MOSpipeDescription: N Channel power MOSFET, IXYS HiperFET ™ Polar ™ Series IXYS N-channel power MOSFET with fast intrinsic diode (HiPerFET) ™) ### MOSFET transistors, a series of advanced discrete power MOSFET devices from IXYS34795+$22.746050+$21.7739200+$21.2296500+$21.09351000+$20.95742500+$20.80195000+$20.70477500+$20.6075 -
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Category: MOSpipeDescription: IXTP Series Single P-channel 200 V 170 mOhm 300 W Power Mosfet - TO-22069825+$30.834250+$29.5165200+$28.7786500+$28.59411000+$28.40962500+$28.19885000+$28.06707500+$27.9352 -
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Category: MOSpipeDescription: Mosfet n-Ch 300V 44A To-22041235+$27.695150+$26.5115200+$25.8487500+$25.68301000+$25.51732500+$25.32805000+$25.20967500+$25.0913
